indium antimonide bistability
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TEMPERATURE DEPENDENCE OF NONLINEAR REFRACTION, …
Bistable Optical Devices in Indium Antimonide and recommend that it be accepted as fulfilling the dissertation requirement for the Degree of nnrtnr of Phjlosophy -~ 0 1==)./'~ ... Arrangement of equipment for observing bistability on reflection . . . . . . 87 4.5. Optical bistability …
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The switching dynamics and noise laminations of indium ...
The switching dynamics of an InSb optically bistable etalon are analyzed in terms of effective time constants which change dramatically near the switch points. Results are presented which show nanosecond switching, critical slowing down, optical biomodality, and noise filtration. The influence of noise levels on both the switching dynamics and the system stability close to switching are discussed.
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UC Riverside
compound materials Copper Indium Disulfide (CuInS2) and Indium Antimonide (InSb) are synthesized using a sono-electrochemical deposition process. Using sonoelectrochemistry overcomes many of the challenges related to the crystal quality that are inherent to regular electrochemistry and allows a greater control in the engineering of
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[1912.06071] Parity-preserving and magnetic field ...
We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard ...
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A comparison of theories of resonant nonlinear refraction ...
Henneberger F (1986) Optical Bistability at the Absorption Edge of Semiconductors, physica status solidi (b), ... Four-wave mixing in indium antimonide, IEEE Journal of Quantum Electronics, 10.1109/JQE.1986.1073110, 22:8, (1328-1340), Online publication date: 1-Aug-1986.
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Physical properties of Indium Antimonide (InSb)
Physical properties of Indium Antimonide (InSb) Basic Parameters at 300 K. Band structure and carrier concentration. Basic Parameters of Band Structure and carrier concentration. Temperature Dependences. Energy Gap Narrowing at High Doping Levels. Effective Masses and Density of States. Donors and Acceptors.
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US3099776A - Indium antimonide transistor - Google Patents
US3099776A US35311A US3531160A US3099776A US 3099776 A US3099776 A US 3099776A US 35311 A US35311 A US 35311A US 3531160 A US3531160 A US 3531160A US 3099776 A US3099776 A US 3099776A Authority US United States Prior art keywords type transistor indium region wafer Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.
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Indium antimonide - Wikipedia
Indium antimonide ( InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III - V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in …
ادامه مطلبBistability and optical switching of spatial patterns in a ...
Bistability of the transverse configuration of the optical field is found for a helium–neon laser oscillating in the TEM01* hybrid optical-resonator mode. Optically induced switching between the mirror-symmetric field patterns occurs when a fraction of the spatially rotated output field is reinjected into the laser resonator. These phenomena are described theoretically with laser equations ...
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Electrical properties of Indium Antimonide (InSb)
For pure InSb at T≥250K lifetime of carrier (electrons and holes) is determined by Auger recombination: τ n = τ p ≈1/C n i2, where C≈5·10 -26 cm -6 s -1 is the Auger coefficient. n i is the intrinsic carrier concentration. For T = 300 K. τ n = τ p ≈5·10 -8 s. For T = 77K. n -type: the lifetime of holes. τ p ~ 10 -6 s.
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Diffusion, Diffraction and Reflection in Semiconductor o.b ...
as indium antimonide are sufficiently long-lived and mobile to migrate significant distances in response to concentration gradients, thereby broadening and smoothing the induced ... bistability, depends only a universal function of Rf, Rb and e-aD. I, diverges if either Rf or Rb
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(PDF) Growth and characterization of indium antimonide and ...
In present study, the n-type indium antimonide (InSb) thin films of thickness 300 nm were deposited on glass substrate at room temperature under the high vacuum ∼10 -5 torr using starting materials.
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Indium Antimonide (InSb) | SpringerLink
12%Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors ( E o ∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications.
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Nonlinear Grating Structures in Indium Antimonide ...
This dissertation describes various nonlinear grating coupling phenomena in InSb waveguides. InSb exhibits an opto-thermal, diffusive nonlinearity at 9.6 mum. This nonlinearity strongly modifies the growth of a guided wave via the grating coupling of an incident, Gaussian signal. In particular, optical limiting and bistability in the coupled power were demonstrated for a detuned grating coupler.
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Non-linear magneto-optics in InSb pumped by A c.w. CO LASER
The saturation of interband magneto-absorption in Indium Antimonide at low incident intensities is reported. The measurement of the lineshape and saturation characteristic for transitions between ...
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Electromagnetic Waves and Optical Resonators
Early experimental apparatus for producing optical bistability consisted of hybrid devices that contained both electronic and optical components. Materials used included indium antimonide (InSb), gallium arsenide (GaAs), and tellurium (Te). By 1979, micron-sized optical resonators had been constructed. A fundamental model
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A study of nonlinear reflection and optical switching in ...
Bistability in the reflected light from an InSb surface has been observed without the use of a resonance cavity, and is explained by an increasing absorption positive feedback mechanism. Relying on this mechanism, a novel InSb optical switch is demonstrated that uses only the surface reflection and operates at room temperature using a pulsed CO >2 laser as the pump beam.
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(PDF) Growth and X ray Characteristics of Dilute Nitride ...
The bandwidth of Indium antimonide can be reduced by a considerable value with addition of very small amount nitrogen. The resultant material will be suitable for infrared detection in long ...
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Effect of zinc on the solubility and distribution ...
Abstract. In the preparation of solid structures of InSb with Bi and Zn, it is necessary to have information on the boundaries of the regions of homogeneity of solid solutions of bismuth and zinc in indium antimonide; for determining these regions along sections of the In-Sb-Bi-Zn quaternary system: InSb-Bi-Zn, InSb-InBi-Zn, InSb-In/sub 2/Bi-Zn, InSb-InBi-Zn/sub 3/Sb/sub 2/, InSb-In/sub 2/Bi ...
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The Switching Dynamics and Optimisation of Optical ...
The Switching Dynamics and Optimisation of Optical Bistability in Indium Antimonide. Iltaif, Abdul-Hussain Khudhair; Abstract. Available from UMI in association with The British Library. This thesis is concerned with the experimental study and analysis of optical bistability in fully optimised InSb systems.
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Possibility of spin-polarized electric current through Mn ...
Examples of ferromagnetic semiconductor materials studied thus far include Mn-doped indium antimonide ... iron (Fe)-, cobalt (Co)-, or Cr-doped indium oxide, zinc oxide, titanium oxide, and tin oxide,,, . ... if the system has the nature of bistability as in the case of Mn 4 N, where both ferromagnetic state and anti-ferromagnetic (or ...
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Indium antimonide | Article about indium antimonide by The ...
indium antimonide. [ ′in·dē·əm ‚an′tim·ə‚nīd] (inorganic chemistry) InSb Crystals that melt at 535°C; an intermetallic compound having semiconductor properties and the highest room-temperature electron mobility of any known material; used in Hall-effect and magnetoresistive devices and as …
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(PDF) Optical bistability and signal amplification in a ...
A STUDY OF OPTICAL BISTABILITY AND SWITCHING DYNAMICS IN INDIUM ANTIMONIDE (InSb) Under Supervision of. Thesis. Full-text available. Jan 1999; ... Bistability, differential gain, discriminator ...
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Indium Antimonide Sputtering Target | AMERICAN ELEMENTS
SECTION 1. IDENTIFICATION. Product Name: Indium Antimonide Sputtering Target Product Number: All applicable American Elements product codes, e.g. IN-SB-02-ST, IN-SB-025-ST, IN-SB-03-ST, IN-SB-035-ST, IN-SB-04-ST, IN-SB-05 CAS #: Relevant identified uses of the substance: Scientific research and development Supplier details: American Elements ...
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Indium Antimonide Detectors - Teledyne Judson
J10D Series Indium Antimonide Detectors. J10D Series detectors are high quality Indium Antimonide (InSb)photodiodes, providing excellent performance in the 1 to 5.5 µm wavelength region. Single crystal p–n junction technology yields high speed, low noise detectors with …
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Modelling of regenerative pulsations in an InSb etalon ...
Bistability was observed but at a sufficiently high intensity the output broke into oscillations of the type discussed here. The competition results from heating through residual absorption which decreases the order parameter, hence the refractive index, without changing the average orientation (director) of the molecules. ... Indium antimonide ...
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Indium Antimonide Market Overview On Future Threats 2027 ...
A new informative report titled as Indium Antimonide Market provides estimations of the size of the global market and share and size of key regional markets during the historical period of 2015 to 2020. The study provides projections of the opportunities and shares, both vis-à-vis value and volume (n units), of various segments in the Indium Antimonide market during the forecast period of ...
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indium antimonide | InSb | ChemSpider
indium antimonide. Molecular Formula InSb. Average mass 236.578 Da. Monoisotopic mass 235.807693 Da. ChemSpider ID 2709929. This record has not been tagged. Names. Names.
ادامه مطلب(PDF) A study of nonlinear reflection and optical ...
A study of nonlinear reflection and optical switching in indium antimonide. April 1992; Journal of Applied Physics 71(5 ... Bistability in the reflected light from an InSb surface has been ...
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